Field and current induced magnetization reversal in patterned Pseudo Spin Valve devices

摘要

The field and current induced magnetization switchings of Pseudo-Spin-Valve (PSV) devices are described in this dissertation. An aligned sequence of three (one optical and two electron-beam) lithographies was used to define the devices and their electrical contacts. The PSV stack comprised a layer of soft ferromagnetic material Ni80oFe20 (NiFe or Py), a non-magnetic spacer layer of Cu, a hard ferromagnetic layer of Co and a capping layer of Au. The current flowed in plane (CIP) and the devices displayed giant magnetoresistance (GMR). Three different shapes were investigated: notched bars, elliptical rings and rhomboidal rings. In the bars, the notches provided strong pinning potential wells for transverse domain walls in the NiFe layer, which, upon cycling an external field, reversed in a step-like fashion, with domain walls nucleating from both ends of the bars, due to strong magnetostatic coupling between both magnetic layers. Additional important magnetostatic coupling effects were measured and micromagnetic simulations confirmed the ubiquity of such coupling. Current induced magnetic switching (CIMS) experiments were conducted, and threshold densities of the order of 1011 A/m2 were used to switch the magnetization under an external bias field, and the critical current decreased with increasing bias.