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Gate potential control of nanofluidic devices

机译:纳米流体装置的栅极电位控制

摘要

The effect of an external gate potential control on the nanofluidic nanochannels was experimentally investigated in this work. Like in the field effect transistors (FET) in microelectronics, molecular transport in micro/nanofluidic channels can be controlled by applying external potentials on the wall of the fluidic channel. In nanofluidic devices, this type of control is expected to be more efficient due to its high surface to charge ratio. We focused on a nanofluidic concentrator to study this effect. We could increase or decrease the concentration rate of the device by increasing or decreasing the surface charge potential (-potential) on the walls of the nanochannels. An increased -potential enhances the electrokinetic effects caused by electrical double layer. Which in turn accelerates the creation of a charge polarization region and improves the concentration capabilities of the device. We also have demonstrated concentration polarization effect, caused by pressure-driven flow in the nanofluidic channel, and showed that this phenomena can also be modulated by changing the gate potential of the nanofluidic devices. The gate potential effect opens the door for closed-loop real-time control of nanofluidic concentrators.
机译:在这项工作中,实验研究了外部栅极电势控制对纳米流体纳米通道的影响。像微电子领域的场效应晶体管(FET)一样,可以通过在流体通道壁上施加外部电势来控制微/纳流体通道中的分子传输。在纳米流体装置中,由于其高的表面电荷比,这种类型的控制有望更加有效。我们专注于纳米流体浓缩器来研究这种效果。我们可以通过增加或减少纳米通道壁上的表面电荷电势(电势)来提高或降低设备的集中度。增大的电位增强了由双电层引起的电动效应。这反过来加速了电荷极化区域的产生并提高了器件的集中能力。我们还证明了由纳米流体通道中压力驱动的流动引起的浓差极化效应,并表明该现象也可以通过改变纳米流体器件的栅极电势来调节。门电位效应为纳米流体浓缩器的闭环实时控制打开了大门。

著录项

  • 作者

    Le Coguic Arnaud;

  • 作者单位
  • 年度 2005
  • 总页数
  • 原文格式 PDF
  • 正文语种 eng
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