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Anisotropic Magnetoresistance of Ni-Co-Fe Alloy Nanowires Electrodeposited into Anodized Aluminium Oxide Membrane Thin Films

机译:Ni-Co-Fe合金纳米线电沉积阳极氧化铝薄膜的各向异性磁电阻

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摘要

To synthesize a novel anisotropic magnetoresistance (AMR) sensor, Ni-Co, Ni-Fe, Co-Ni and Co-Fe alloy nanowires were electrodeposited into nano-channels of anodized aluminium oxide films with the thickness ranging from 20 μm to 200 μm. The growth rate of the nanowires was around 200 nm/sec at the cathode potential of -1.2 V vs. Ag/AgCl. The aspect ratio of the nanowires reached up to ca. 3,000 to 1 and the cylindrical shape was precisely transferred from the nano-channels to the nanowires. Magnetic hysteresis loops of Ni-Co, Ni-Fe, Co-Ni and Co-Fe alloy nanowires with the diameter of 60 nm showed typical perpendicular magnetization behaviour due to the uni-axial shape anisotropy and the coercive force reached up to 1 kOe. 3.2% of AMR was observed in Co-1.5%Ni alloy nanowires with the aspect ratio of 1,000.
机译:为了合成新型各向异性磁阻(AMR)传感器,将Ni-Co,Ni-Fe,Co-Ni和Co-Fe合金纳米线电沉积到阳极氧化氧化铝膜的纳米通道中,其厚度范围为20μm至200μm。在相对于Ag / AgCl的-1.2V的阴极电势下,纳米线的生长速率为约200nm / sec。纳米线的长宽比达到约。 3,000比1,圆柱形状从纳米通道精确转移到纳米线。直径为60 nm的Ni-Co,Ni-Fe,Co-Ni和Co-Fe合金纳米线的磁滞回线由于单轴形状各向异性而具有典型的垂直磁化行为,矫顽力达到1 kOe。在Co-1.5%Ni合金纳米线中,长宽比为1,000时,观察到3.2%的AMR。

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