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Photo-excited electroless deposition of semiconducting oxide thin films and their electrocatalytic properties

机译:光激发无电沉积半导体氧化物薄膜及其电催化性能

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摘要

The present study demonstrates the beneficial effects of ultraviolet (UV) light irradiation on the electroless deposition of several n-type semiconducting oxide thin films from an aqueous solution. To obtain ceria (CeO2), Ce3+ was oxidized to a higher valence in the presence of dissolved oxygen molecules and was then precipitated as CeO2 on a conductive substrate through a local cell mechanism. Irradiation of the substrate by UV light during the reaction caused the generation of photocarriers (electron and holes) in the surface oxide layer. The resultant photocarriers enabled further electrochemical reactions on the surfaces of the pre-deposited CeO2 nuclei together with the substrate surface. As a result, the deposition rate and crystallinity of the film were significantly improved by UV light irradiation. CeO2 thin films prepared on a Pt substrate by the proposed photoelectroless deposition method showed electrocatalytic activity for methanol oxidation without post-annealing, in contrast to the lower activity of a film deposited in the dark. This discrepancy is discussed on the basis of film morphology and crystallinity. Furthermore, it was confirmed that the electroless deposition of Sn and Pr oxide (hydroxide) was also accelerated by photoirradiation. In this paper, the photoelectroless deposition mechanism is discussed in detail, and the advantages of the proposed techniques are clarified.
机译:本研究证明了紫外线(UV)辐照对水溶液中几种n型半导体氧化物薄膜的化学沉积的有益作用。为了获得二氧化铈(CeO2),在溶解的氧分子存在下,将Ce3 +氧化成更高的化合价,然后通过局部细胞机理以CeO2的形式沉淀在导电基底上。在反应过程中用紫外线照射衬底会在表面氧化物层中产生光载流子(电子和空穴)。所得的光载体使预沉积的CeO2原子核的表面与基底表面能够进行进一步的电化学反应。结果,通过UV光照射,膜的沉积速率和结晶度显着提高。通过提议的光化学沉积方法在Pt基板上制备的CeO2薄膜在不进行后退火的情况下显示出对甲醇氧化的电催化活性,这与在黑暗中沉积的膜的活性较低相反。基于膜的形态和结晶度讨论了这种差异。此外,证实了通过光辐照还促进了Sn和Pr氧化物(氢氧化物)的化学沉积。在本文中,详细讨论了光化学沉积机理,并阐明了所提出技术的优点。

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  • 作者

    Kamada Kai; Moriyasu Ayano;

  • 作者单位
  • 年度 2011
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  • 原文格式 PDF
  • 正文语种 en
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