Etude d'une nouvelle filière de composants sur technologie nitrure de gallium. Conception et réalisation d'amplificateurs distribués de puissance large bande à cellules cascodes en montage flip-chip et technologie MMIC.

摘要

The aim of this study is to assess the potentialities of HEMTs AlGaN/GaN transistors for RF power applications. The properties of wide band-gap materials and especially the GaN material are analysed in order to highlight their capabilities for applications to wideband power amplifiers. Modeling of passive components is explained and the design guide library on SiC substrate is implemented. Characterization results as well as linear and nonlinear simulations are presented on devices and circuits. The results of this work give concrete expression to the design of wideband power amplifiers showing a distributed architecture of cascode cells using GaN HEMTs, the first one flip-chip mounted onto an AlN substrate and the second one in MMIC technology. One MMIC version allows to obtain 6.3W over a 4-18GHz bandwidth at 2dB compression input power. These results bring to light famous potentialities assigned to HEMTs GaN components.