Implementation of a Dual on Die 140 V Super-Junction Power Transistors

摘要

Increasing the switching frequency for switch mode power supplies is one method to achieve smaller, lighter weight and hopefully cheaper power converters. Silicon is not only the dominant material used to produce the switches but also it allows more circuitry to be easily integrated on the same die. This work presents an application customized switches to be used in switch mode power supplies. The prototype chip was implemented using a 0.18 μm SOI process and includes dual electrically isolated 140 V, 1.2 Ω N-channel MOSFETs.