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Discovery of high-performance low-cost n-type Mg3Sb2-based thermoelectric materials with multi-valley conduction bands

机译:发现具有多谷导带的高性能低成本n型mg3sb2基热电材料

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摘要

Widespread application of thermoelectric devices for waste heat recovery requires low-cost high-performance materials. The currently available n-type thermoelectric materials are limited either by their low efficiencies or by being based on expensive, scarce or toxic elements. Here we report a low-cost n-type material, Te-doped Mg3Sb1.5Bi0.5, that exhibits a very high figure of merit zT ranging from 0.56 to 1.65 at 300-725 K. Using combined theoretical prediction and experimental validation, we show that the high thermoelectric performance originates from the significantly enhanced power factor because of the multi-valley band behaviour dominated by a unique near-edge conduction band with a sixfold valley degeneracy. This makes Te-doped Mg3Sb1.5Bi0.5 a promising candidate for the low- and intermediate-temperature thermoelectric applications.
机译:热电设备在废热回收中的广泛应用需要低成本的高性能材料。当前可用的n型热电材料受到其低效率或基于昂贵,稀缺或有毒元素的限制。在这里,我们报告了一种低成本的n型材料,掺Te的Mg3Sb1.5Bi0.5,在300-725 K时具有非常高的品质因数zT,范围从0.56到1.65,我们结合了理论预测和实验验证,结果表明,高热电性能源于功率因数的显着提高,这是因为多谷带行为由具有六倍谷值简并性的独特近边缘导带所支配。掺Te的Mg3Sb1.5Bi0.5成为低温和中温热电应用的有希望的候选者。

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