AlGaAs is a promising material for integrated nonlinearphotonics due to its intrinsic high nonlinearity. However,the challenging fabrication of deep etched AlGaAs devices makes it difficult to realize high-performance devices such as low-loss dispersion engineered waveguides and high quality microring resonators. Here, we report a process tomake high-quality AlGaAs-on-insulator (AlGaAsOI) waferswhere high confinement waveguides can be realized. Using optimized patterning processes, we fabricated AlGaAsOI waveguides with propagation losses as low as 1 dB/cmand microring resonators with quality factors up to 350,000 at telecom wavelengths. Our demonstration opens new prospects for AlGaAs devices in integrated nonlinear photonics.
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机译：AlGaAs由于其固有的高非线性特性，因此是用于集成非线性光子学的有前途的材料。然而，深蚀刻的AlGaAs器件的制造挑战性使得难以实现高性能器件，例如低损耗色散工程波导和高质量微环谐振器。在这里，我们报告了一种制造高质量绝缘体上AlGaAs晶片（AlGaAsOI）晶片的工艺，该晶片可以实现高约束波导。使用优化的构图工艺，我们制造了AlGaAsOI波导，其传播损耗低至1 dB / cm，而微环谐振器的质量因数在电信波长下高达350,000。我们的演示为集成非线性光子学中的AlGaAs器件开辟了新的前景。
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