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Three-Dimensional Reduced Graphene Oxide Network on Copper Foam as High-performance Supercapacitor Electrodes

机译:作为高性能超级电容器电极的铜泡沫三维还原氧化石墨烯网络

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摘要

E lectrochemically generated copper foam (Cuf) could serve as an effective template for fabrication of three - dimensional (3D) reduced graphe n e oxide (rGO) network s. Here we present a facile approach to preparation of 3D rGO network supported by Cuf a s binder - free and current collector - integrated supercapacitor electrode s (3DrGO@Cuf) [1] . The method involves a two - step procedure, self - assembly of graphene oxide (GO) nanosheets on Cuf and electrochemical reduction of GO into rGO. We have systematically characterized as - synthesized materials using AFM, SEM and XRD to reveal their morpholog ical and structural features . E lectrochemical functional tests show that such electrode s are capable of delivering a specific capacitance as high as 623 F g - 1 a t a curre nt density of 1 A g - 1 . Th e obse r ved high specific capacitance is most likely attributed to the unique porous structure consist ing of highly connected nano scale pore s and high - density capacitive sites. 3DrGO@Cuf electrodes also exhibit considerably high sta bility over successive charge - discharge switching. For example, over 98 % specific capacitance is retained after 2000 cycle s . To the best of our knowledge, we may have achieve d the highest specific capacitance with 3DrGO@Cuf electrodes among reported pure 3D graphene materials to date (i.e. 3D graphene materials without doping additional capacitive species ) [2 , 3 ]
机译:电化学产生的泡沫铜(Cuf)可作为制造三维(3D)还原石墨烯(rGO)网络的有效模板。在这里,我们提出一种简便的方法来制备由Cuf支持的无粘结剂和集电器集成的超级电容器电极(3DrGO @ Cuf)[1]支持的3D rGO网络。该方法涉及两步程序,在Cuf上自组装氧化石墨烯(GO)纳米片,以及将GO电化学还原成rGO。我们已经使用AFM,SEM和XRD对合成材料进行了系统地表征,以揭示它们的形态和结构特征。电化学功能测试表明,这种电极能够提供高达623 F g-1的比电容和1 A g-1的电流密度。观察到的高比电容最有可能归因于独特的多孔结构,该结构由高度连接的纳米级孔和高密度电容位点组成。 3DrGO @ Cuf电极在连续的充放电切换中也表现出很高的稳定性。例如,在2000个周期s之后,保留了98%以上的比电容。据我们所知,迄今为止,在报告的纯3D石墨烯材料(即不掺杂其他电容性物质的3D石墨烯材料)中,使用3DrGO @ Cuf电极可获得最高的比电容[2,3]

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