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Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films

机译:在巨大磁阻锰氧化物薄膜中与金属 - 绝缘体转变的角度依赖磁阻的交叉

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摘要

The temperature and magnetic field dependence of angular dependent magnetoresistance (AMR) along two orthogonal directions ([100] and [01]) was investigated in a charge-orbital-ordered Sm0.5Ca0.5MnO3 (SCMO) film grown on (011)-oriented SrTiO3 substrates. A dramatic decrease of AMR magnitude in both directions was observed with the appearance of magnetic-field-induced metal-insulator transition, which further led to a sign crossover in the AMR effect. The AMR crossover may give a direct evidence of the drastic modification of electronic structure or possible orbital reconstruction with the magnetic-destruction of charge/orbital ordering in SCMO films. ©2009 American Institute of Physics
机译:研究了在(011)-取向的SrTiO3衬底。随着磁场引起的金属-绝缘体转变的出现,在两个方向上都观察到了AMR幅度的急剧下降,这进一步导致了AMR效应的符号交叉。 AMR交叉可以直接证明SCMO薄膜中电子结构发生了剧烈的变化,或者可能发生了磁破坏电荷/轨道有序现象,从而可能导致轨道重构。 ©2009美国物理研究所

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