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High-Index Contrast Silicon Rich Silicon Nitride Optical Waveguides and Devices

机译:高折射率对比硅富氮化硅光波导和器件

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摘要

This research focused on the realization of high-density integrated optical devices made with high-index contrast waveguides. The material platform used for to develop these devices was modeled after standard silicon on silicon technology. The high-index waveguide core material was silicon rich silicon nitride. This provided a sharp contrast with silica and made low-loss waveguide bending radii less than 25mm possible. An immediate consequence of such small bending radii is the ability to make practical ring resonator based devices with a large free spectral range. Several ring resonator based devices have been demonstrated. Directly UV-written waveguides have also been used with high-index contrast ring resonators to make hybrid devices. These hybrid devices are interesting because of the possibility of making practical low insertion-loss devices that utilize the benefits of a high-index platform.
机译:这项研究的重点是实现由高折射率对比波导制成的高密度集成光学器件。用于开发这些器件的材料平台是根据标准的硅上硅技术建模的。高折射率波导芯材料是富含硅的氮化硅。这与二氧化硅形成鲜明的对比,并使低损耗波导弯曲半径小于25mm成为可能。如此小的弯曲半径的直接后果是能够制造具有大自由光谱范围的实用的基于环形谐振器的设备。已经证明了几种基于环形谐振器的设备。直接紫外线写入的波导也已与高折射率对比环谐振器一起使用,以制造混合器件。这些混合设备很有趣,因为有可能制造出利用高折射率平台的优点的实用的低插入损耗设备。

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