A III–V/Si vertical-cavity in-plane-emitting laser structure is suggested and numerically investigated. This hybrid laser consists of a distributed Bragg reflector, a III–V active region, and a high-index-contrast grating HCG connected to an in-plane output waveguide. The HCG and the output waveguide are made in the Si layer of a silicon-on-insulator wafer by using Si-electronics-compatible processing. The HCG works as a highly-reflective mirror for vertical resonance and at the same time routes light to the in-plane output waveguide. Numerical simulations show superior performance compared to existing silicon light sources.
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