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Effects of electron-impurity scattering on density of states in silicene: impurity bands and band-gap narrowing

机译:电子杂质散射对纳米态密度的影响   硅质:杂质带和带隙变窄

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摘要

Considering the interband correlation, we present a generalizedmultiple-scattering approach of Green's function to investigate the effects ofelectron-impurity scattering on the density of states in silicene. Thereduction of energy gaps in the case of relatively high chemical potential andthe transformation of split-off impurity bands into band tails for low chemicalpotential are found. The dependency of optical conductivity on the impurityconcentration is also discussed for frequency within the terahertz regime.
机译:考虑到带间相关性,我们提出了格林函数的广义多重散射方法,以研究电子杂质散射对硅中态密度的影响。发现在较高化学势的情况下能隙的减少,以及在较低化学势的情况下将分离出的杂质带转变为能带尾部的情况。太赫兹范围内的频率也讨论了光导率对杂质浓度的依赖性。

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