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Resistive Switching Phenomena of HfO2 Films Grown by MOCVD for Resistive Switching Memory Devices

机译:电阻率mOCVD生长HfO2薄膜的电阻切换现象   切换存储设备

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摘要

The resistive switching phenomena of HfO2 films grown by metalorganicchemical vapor deposition was studied for the application of ReRAM devices. Inthe fabricated Pt/HfO2/TiN memory cells, the bipolar resistive switchingcharacteristics were observed, and the set and reset states were measured to beas low as 7 uA and 4 uA, respectively, at VREAD = 1 V. Regarding the resistiveswitching performance, the stable RS performance was observed under 40repetitive dc cycling test with the small variations of set/reset voltages andcurrents, and good retention characteristics over 105 s in both LRS and HRS.These results show the possibility of MOCVD grown HfO2 films as a promisingresistive switching materials for ReRAM applications.
机译:研究了金属有机化学气相沉积生长的HfO2薄膜的电阻转换现象,以用于ReRAM器件的应用。在制造的Pt / HfO2 / TiN存储器单元中,观察到双极电阻开关特性,并且在VREAD = 1 V时,设置状态和复位状态的测量值分别低至7 uA和4 uA。关于电阻开关性能,稳定在40次重复的DC循环测试中观察到RS性能,其设置/复位电压和电流的变化很小,并且在LRS和HRS中均具有超过105 s的良好保持特性,这些结果表明MOCVD生长的HfO2膜有可能用作ReRAM的有希望的电阻开关材料应用程序。

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