Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles

摘要

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) withembedded nanoparticles (NPs) was calculated in range of the quantum-ballisticmodel. The simulation was performed for electron tunneling through theinsulating layer with embedded magnetic and nonmagnetic NPs within the approachof the double barrier subsystem connected in parallel to the single barrierone. This model can be applied for both MTJs with in-plane magnetization andperpendicular one. We also calculated the in-plane component of the spintransfer torque (STT) versus the applied voltage in MTJs with magnetic NPs anddetermined that its value can be much larger than in single barrier system(SBS) for the same tunneling thickness. The reported simulation reproducesexperimental data of the TMR suppression and peak-like TMR anomalies at lowvoltages available in literature.