N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials

摘要

We demonstrated n-type and p-type carrier injections into a transition metaldichalcogenide (TMD) WSe2 using van der Waals (vdW) contacts of two-dimensional(2D) materials: graphite for an n-type contact and NbSe2 for a p-type contact.Instead of conventional methods such as the evaporation of metals on TMD, 2Dmetals were transferred onto WSe2 in order to form van der Waals contacts. Withthese contacts, we demonstrated a small Schottky barrier height for bothcarrier polarities. Our finding reveals the potential of a high-performance vdWmetal/semiconductor contact for use in electronics applications.