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Distinguishing bulk and surface electron-phonon coupling in the topological insulator Bi2Se3 using time-resolved photoemission spectroscopy

机译:区分体积和表面电子 - 声子耦合   拓扑绝缘体Bi2se3使用时间分辨光电子能谱

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摘要

We report time- and angle-resolved photoemission spectroscopy measurements onthe topological insulator Bi2Se3. We observe oscillatory modulations of theelectronic structure of both the bulk and surface states at a frequency of 2.23THz due to coherent excitation of an A1g phonon mode. A distinct, additionalfrequency of 2.05 THz is observed in the surface state only. The lower phononfrequency at the surface is attributed to the termination of the crystal andthus reduction of interlayer van der Waals forces, which serve as restorativeforces for out-of-plane lattice distortions. DFT calculations quantitativelyreproduce the magnitude of the surface phonon softening. These resultsrepresent the first band-resolved evidence of the A1g phonon mode coupling tothe surface state in a topological insulator.
机译:我们报告拓扑绝缘子Bi2Se3的时间和角度分辨光发射光谱测量。由于Alg声子模式的相干激发,我们在2.23THz的频率下观察到了体态和表面态的电子结构的振荡调制。仅在表面状态下观察到2.05 THz的独特的附加频率。表面处较低的声子频率归因于晶体的终止以及层间范德华力的减小,层间范德华力用作平面外晶格畸变的恢复力。 DFT计算定量地重现了表面声子软化的幅度。这些结果代表了Alg声子模耦合到拓扑绝缘体中的表面态的第一个能带解析证据。

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