Revisit the spin-FET: Multiple reflections, inelastic scattering, and lateral size effects

摘要

We revisit the spin-injected field effect transistor (spin-FET) by simulatinga lattice model based on recursive lattice Green's function approach. In theone-dimensional case and coherent regime, the simulated results revealnoticeable differences from the celebrated Datta-Das model, which motivate thusan improved treatment and lead to analytic and generalized result. Thesimulation also allows us to address inelastic scattering (using B\"uttiker'sfictitious reservoir approach) and lateral confinement effects on the controlof spins which are important issues in the spin-FET device.