Effect of C-face 4H-SiC(0001) deposition on thermopower of single and multilayer graphene in AA, AB and ABC stacking

摘要

The Seebeck coefficient in multilayer graphene is investigated within thedensity-functional theory, using the semiclassical Boltzmann equations andinterpolating the bands in a maximally-localized Wannier functions basis set.We compare various graphene stackings (AA, AB and ABC) both free-standing anddeposited on a $4H$-SiC(0001) C-terminated substrate. We find that the presenceof the SiC substrate can significantly affect the thermopower properties ofgraphene layers, depending on the stacking, providing a promising way to tailorefficient graphene-based devices.