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Shocks in dense clouds. IV. Effects of grain-grain processing on molecular line emission

机译:在茂密的云层中冲击。 IV。谷粒加工对玉米的影响   分子线发射

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摘要

Grain-grain processing has been shown to be an indispensable ingredient ofshock modelling in high density environments. For densities higher than\sim10^5 cm-3, shattering becomes a self-enhanced process that imposes severechemical and dynamical consequences on the shock characteristics. Shattering isaccompanied by the vaporization of grains, which can directly release SiO tothe gas phase. Given that SiO rotational line radiation is used as a majortracer of shocks in dense clouds, it is crucial to understand the influence ofvaporization on SiO line emission. We have developed a recipe for implementingthe effects of shattering and vaporization into a 2-fluid shock model,resulting in a reduction of computation time by a factor \sim100 compared to amulti-fluid modelling approach. This implementation was combined with anLVG-based modelling of molecular line radiation transport. Using this model wecalculated grids of shock models to explore the consequences of differentdust-processing scenarios. Grain-grain processing is shown to have a stronginfluence on C-type shocks for a broad range of magnetic fields: they becomehotter and thinner. The reduction in column density of shocked gas lowers theintensity of molecular lines, at the same time as higher peak temperaturesincrease the intensity of highly excited transitions compared to shocks withoutgrain-grain processing. For OH the net effect is an increase in lineintensities, while for CO and H2O it is the contrary. The intensity of H2emission is decreased in low transitions and increased for highly excitedlines. For all molecules, the highly excited lines become sensitive to thevalue of the magnetic field. Although vaporization increases the intensity ofSiO rotational lines, this effect is weakened by the reduced shock width. Therelease of SiO early in the hot shock changes the excitation characteristics ofSiO radiation.
机译:谷物加工已被证明是高密度环境中电击建模不可或缺的组成部分。对于高于\ sim10 ^ 5 cm-3的密度,粉碎会成为自我增强的过程,会对冲击特性产生严重的化学和动力学影响。碎裂伴随着颗粒的汽化,可以直接将SiO释放到气相中。考虑到SiO旋转线辐射被用作密云中震动的主要示踪剂,因此了解蒸发对SiO线发射的影响至关重要。我们已经开发了一种将破碎和汽化效果实现为2流体冲击模型的方法,与多流体建模方法相比,可将计算时间减少\ sim100。该实现方式与基于LVG的分子线辐射传输模型相结合。使用该模型,我们计算了冲击模型的网格,以探索不同粉尘处理方案的后果。晶粒加工对广泛磁场下的C型冲击具有很强的影响:它们变得更热,更薄。与未进行颗粒处理的冲击相比,较高的峰值温度会增加高激发跃迁的强度,与此同时,被冲击气体的色谱柱密度降低会降低分子线的强度。对于OH而言,净效应是线强度的增加,而对于CO和H2O则相反。 H2的发射强度在低转变时降低,而在高激发线时则增加。对于所有分子,高激发线对磁场值变得敏感。尽管汽化增加了SiO旋转线的强度,但减小的冲击宽度减弱了这种影响。 SiO在热冲击早期的释放改变了SiO辐射的激发特性。

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