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Plasmon and dielectric background inhomogeneity enhancement of Coulomb drag in graphene double-layer structures

机译:等离子体和电介质背景不均匀性增强库仑   拖动石墨烯双层结构

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摘要

The drag of massless fermions in graphene double-layer structures isinvestigated in a wide rage of temperatures and inter-layer separations. Weshow that the inhomogeneity of the dielectric background in such graphenestructures for experimentally relevant parameters results in a significantenhancement of the drag resistivity. At intermediate temperatures the dynamicalscreening via plasmon-mediated drag enhances the drag resistivity and resultsin an upturn in its behavior at large inter-layer separations. In a range ofinter-layer separations, corresponding to the strong-to-weak crossover couplingof graphene layers, we find that the drag resistivity decreases approximatelyquadratically with the inter-layer spacing. This dependence weakens with adecrease of the inter-layer spacing while for larger separations we recover thecubic (quartic) dependence at intermediate (low) temperatures.
机译:研究了石墨烯双层结构中无质量费米子的阻力,研究了温度范围和层间分离的范围。我们表明,对于实验相关参数,在此类石墨烯结构中介电背景的不均匀性会导致抗阻性的显着提高。在中等温度下,通过等离激元介导的阻力的动态筛选增强了阻力阻力,并导致其在大的层间分隔下的行为上升。在层间间隔的范围内,对应于石墨烯层的强到弱交叉耦合,我们发现抗阻性随层间间距大约二次下降。这种依赖性随着层间间距的减小而减弱,而对于较大的分离,我们在中等(较低)温度下恢复了立方(四次)依赖性。

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