An AC electric field applied to a donor-bound electron in a semiconductormodulates the orbital character of its wave function, which affects theelectron's spin dynamics via the spin-orbit interaction. Numerical calculationsof the spin dynamics of a hydrogenic donor (Si) embedded in GaAs, using areal-space multi-band k.p formalism, show the high symmetry of the hydrogenicdonor state results in strongly nonlinear dependences of the electronic gtensor on applied fields. A nontrivial consequence is that the most rapid Rabioscillations occur for electric fields modulated at a subharmonic of the Larmorfrequency.
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