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A theoretical analysis of the chemical bonding and electronic structure of graphene interacting with Group IA and Group VIIA elements

机译:化学键和电子结构的理论分析   石墨烯与Ia族和VIIa族元素相互作用

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摘要

We propose a new class of materials, which can be viewed as graphenederivatives involving Group IA or Group VIIA elements, forming what we refer toas graphXene. We show that in several cases large band gaps can be found toopen up, whereas in other cases a semimetallic behavior is found. Formationenergies indicate that under ambient conditions, sp$^3$ and mixed sp$^2$/sp$^3$systems will form. The results presented allow us to propose that by carefultuning of the relative concentration of the adsorbed atoms, it should bepossible to tune the band gap of graphXene to take any value between 0 and 6.4eV.
机译:我们提出了一类新的材料,可以将其视为涉及IA组或VIIA组元素的石墨化衍生物,形成我们称为graphXene的材料。我们表明,在某些情况下,可以发现打开大的带隙,而在其他情况下,则发现是半金属行为。形成能表明,在环境条件下,将形成sp $ ^ 3 $和sp $ ^ 2 $ / sp $ ^ 3 $混合系统。给出的结果使我们建议,通过仔细调节吸附原子的相对浓度,应该可以将graphXene的带隙调节为0至6.4eV之间的任何值。

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