High Quality, Transferable Graphene Grown on Single Crystal Cu(111) Thin Films on Basal-Plane Sapphire

摘要

The current method of growing large-area graphene on Cu surfaces(polycrystalline foils and thin films) and its transfer to arbitrary substratesis technologically attractive. However, the quality of graphene can be improvedsignificantly by growing it on single-crystal Cu surfaces. Here we show thathigh quality, large-area graphene can be grown on epitaxial single-crystalCu(111) thin films on reusable basal-plane sapphire (alpha-Al2O3(0001))substrates and then transferred to another substrate. While enabling graphenegrowth on Cu single-crystal surfaces, this method has the potential to avoidthe high cost and extensive damage to graphene associated with sacrificing bulksingle-crystal Cu during graphene transfer.