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High Quality, Transferable Graphene Grown on Single Crystal Cu(111) Thin Films on Basal-Plane Sapphire

机译:在单晶Cu(111)薄膜上生长的高质量,可转移的石墨烯   基面蓝宝石上的电影

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摘要

The current method of growing large-area graphene on Cu surfaces(polycrystalline foils and thin films) and its transfer to arbitrary substratesis technologically attractive. However, the quality of graphene can be improvedsignificantly by growing it on single-crystal Cu surfaces. Here we show thathigh quality, large-area graphene can be grown on epitaxial single-crystalCu(111) thin films on reusable basal-plane sapphire (alpha-Al2O3(0001))substrates and then transferred to another substrate. While enabling graphenegrowth on Cu single-crystal surfaces, this method has the potential to avoidthe high cost and extensive damage to graphene associated with sacrificing bulksingle-crystal Cu during graphene transfer.
机译:当前在Cu表面(多晶箔和薄膜)上生长大面积石墨烯并将其转移至任意衬底的方法在技术上具有吸引力。然而,通过在单晶铜表面上生长石墨烯,可以显着提高石墨烯的质量。在这里,我们表明高质量,大面积石墨烯可以在可重复使用的基面蓝宝石(alpha-Al2O3(0001))衬底上的外延单晶Cu(111)薄膜上生长,然后转移到另一个衬底上。在使石墨单晶在Cu单晶表面上生长的同时,该方法具有避免在石墨烯转移过程中牺牲大体积单晶Cu所带来的高成本和对石墨烯的广泛损害的潜力。

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