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Acetylene on Si(100) from first principles: adsorption geometries, equilibrium coverages and thermal decomposition

机译:si(100)上的乙炔来自第一原理:吸附几何形状,   平衡覆盖率和热分解

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摘要

Adsorption of acetylene on Si(100) is studied from first principles. We findthat, among a number of possible adsorption configurations, the lowest-energystructure is a ``bridge'' configuration, where the C$_2$H$_2$ molecule isbonded to two Si atoms. Instead, ``pedestal'' configurations, recently proposedas the lowest-energy structures, are found to be much higher in energy and,therefore, can represent only metastable adsorption sites. We have calculatedthe surface formation energies for two different saturation coverages, namely0.5 and 1 monolayer, both observed in experiments. We find that although, ingeneral, the full monolayer coverage is favored, a narrow range of temperaturesexists in which the 0.5 monolayer coverage is the most stable one, where theacetylene molecules are adsorbed in a $2\times 2$ structure. This resultdisagrees with the conclusions of a recent study and represents a possibleexplanation of apparently controversial experimental findings. The crucial roleplayed by the use of a gradient-corrected density functional is discussed.Finally, we study thermal decomposition of acetylene adsorbed on Si(100) bymeans of finite-temperature Molecular Dynamics, and we observe an unexpectedbehavior of dehydrogenated acetylene molecules.
机译:从第一原理研究了乙炔在Si(100)上的吸附。我们发现,在许多可能的吸附构型中,最低能级结构是``桥''构型,其中C $ _2 $ H $ _2 $分子键合到两个Si原子上。相反,最近被提出为最低能量结构的``基座''构型被发现具有更高的能量,因此只能代表亚稳的吸附位点。我们已经计算了两个不同的饱和覆盖率,即0.5和1个单层的表面形成能,这两个都是在实验中观察到的。我们发现,尽管一般来说,单层覆盖是最有利的,但是存在一个狭窄的温度范围,其中0.5个单层覆盖是最稳定的,乙炔分子以2乘2 2的结构被吸附。该结果与最近的研究结论不同,并且代表了有争议的实验结果的可能解释。最后,我们通过有限温度分子动力学方法研究了吸附在Si(100)上的乙炔的热分解,并观察到了脱乙炔分子的意外行为。

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