Dynamic avalanche breakdown of a p-n junction: deterministic triggering of a plane streamer front

摘要

We discuss the dynamic impact ionization breakdown of high voltage p-njunction which occurs when the electric field is increased above the thresholdof avalanche impact ionization on a time scale smaller than the inversethermogeneration rate. The avalanche-to-streamer transition characterized bygeneration of dense electron-hole plasma capable to screen the applied externalelectric field occurs in such regimes. We argue that the experimentallyobserved deterministic triggering of the plane streamer front at the electricfield strength above the threshold of avalanche impact ionization but yet belowthe threshold of band-to-band tunneling is generally caused by field-enhancedionization of deep-level centers. We suggest that the process-induced sulfurcenters and native defects such as EL2, HB2, HB5 centers initiate the front inSi and GaAs structures, respectively. In deep-level free structures the planestreamer front is triggered by Zener band-to-band tunneling.