Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field

摘要

We report on the observation of Coulomb oscillations from localized quantumdots superimposed on the normal hopping current in ZnO nanowire transistors.The Coulomb oscillations can be resolved up to 20 K. Positive anisotropicmagnetoresistance has been observed due to the Lorentz force on the carriermotion. Magnetic field-induced tunneling barrier transparency results in anincrease of oscillation amplitude with increasing magnetic field. The energyshift as a function of magnetic field indicates electron wavefunctionmodification in the quantum dots.