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Optical functions and electronic structure of CuInSe2, CuGaSe2, CuInS2, and CuGaS2

机译:CuInse2,CuGase2,CuIns2的光学功能和电子结构,   和CuGas2

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摘要

We report on the complex dielectric tensor components of four chalcopyritesemiconductors in the optical energy range (1.4-5.2 eV, from 0.9 eV forCuInSe2) determined at room temperature by spectroscopic ellipsometry. Ourresults were obtained on single crystals of CuInSe2, CuGaSe2, CuInS2, andCuGaS2. Values of refractive indices n, extinction coefficients k andnormal-incidence reflectivity R in the two different polarizations are givenand compared with earlier data where available. We analyze in detail thestructures of the dielectric function observed in the studied energy region.Critical-point parameters of electronic transitions are obtained from fittingof numerically calculated second-derivative spectra. Experimental energies andpolarizations are discussed on the basis of published band structurecalculations.
机译:我们报告了在室温下通过光谱椭偏法测定的四种黄铜矿半导体光能范围(1.4-5.2 eV,对于CuInSe2为0.9 eV)的复数介电张量分量。我们的结果是在CuInSe2,CuGaSe2,CuInS2和CuGaS2单晶上获得的。给出了两种不同偏振态的折射率n值,消光系数k和法向入射反射率R的值,并与现有的早期数据进行了比较。我们详细分析了在所研究的能量区域中观察到的介电函数的结构。电子跃迁的临界点参数是通过拟合数值计算的二阶导数光谱获得的。在公开的能带结构计算的基础上讨论了实验能量和极化。

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