Resonant Raman scattering by elementary electronic excitations in semiconductor structures

摘要

We explain quantitatively why resonant Raman scattering spectroscopy, anextensively used experimental tool in studying elementary electronicexcitations in doped low dimensional semiconductor nanostructures, alwaysproduces an observable peak at the so-called "single particle" excitationalthough the standard theory predicts that there should be no such singleparticle peak in the Raman spectra. We have thus resolved an experimentalpuzzle which dates back more than twenty-five years.