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Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission

机译:离子注入Gaas中载流子动力学的仿真研究   观察太赫兹发射

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摘要

We have studied terahertz (THz) emission from arsenic-ion implanted GaAs bothexperimentally and using a three-dimensional carrier dynamics simulation. Auniform density of vacancies was formed over the optical absorption depth ofbulk GaAs samples by performing multi-energy implantations of arsenic ions (1and 2.4MeV) and subsequent thermal annealing. In a series of THz emissionexperiments the frequency of peak THz power was found to increase significantlyfrom 1.4 to 2.2THz when the ion implantation dose was increased from 10^13 to10^16 cm-3. We used a semi-classical Monte-Carlo simulation of ultra-fastcarrier dynamics to reproduce and explain these results. The effect of theion-induced damage was included in the simulation by considering carrierscattering at neutral and charged impurities, as well as carrier trapping atdefect sites. Higher vacancy concentrations and shorter carrier trapping timesboth contributed to shorter simulated THz pulses, the latter being moreimportant over experimentally realistic parameter ranges.
机译:我们已经研究了砷离子注入的GaAs的太赫兹(THz)发射,并且使用了三维载流子动力学仿真。通过对砷离子(1和2.4MeV)进行多能量注入并随后进行热退火,在大块GaAs样品的光吸收深度上形成了均匀的空位密度。在一系列的THz发射实验中,当离子注入剂量从10 ^ 13增加到10 ^ 16 cm-3时,峰值THz功率的频率从1.4THz显着增加到2.2THz。我们使用超快载子动力学的半经典蒙特卡洛模拟来再现和解释这些结果。通过考虑载流子在中性和带电杂质处的散射以及载流子在缺陷位点处的捕获,将离子诱导的损伤的影响包括在模拟中。较高的空位浓度和较短的载流子捕获时间都有助于缩短模拟的THz脉冲,后者在实验上可行的参数范围内更重要。

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