Electron Spin Polarization in Resonant Interband Tunneling Devices

摘要

We study spin-dependent interband resonant tunneling in double-barrierInAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can beused as spin filters utilizing spin-selective tunneling of electrons throughthe light-hole resonant channel. High densities of the spin polarized electronsinjected into bulk InAs make spin resonant tunneling devices a viablealternative for injecting spins into a semiconductor. Another striking featureof the proposed devices is the possibility of inducing additional resonantchannels corresponding to the heavy holes. This can be implemented bysaturating the in-plane magnetization in the quantum well.