Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima

摘要

High mobility two-dimensional electron systems exhibit vanishing resistanceover broad magnetic field intervals upon excitation with microwaves, with acharacteristic reduction of the resistance with increasing radiation intensityat the resistance minima. Here, we report experimental results examining thevoltage - current characteristics, and the resistance at the minima vs. themicrowave power. The findings indicate that a non-linear V-I curve in theabsence of microwave excitation becomes linearized under irradiation, unlikeexpectations, and they suggest a similarity between the roles of the radiationintensity and the inverse temperature.