首页> 外文OA文献 >Growth evolution of SixNy on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality

【2h】

Growth evolution of SixNy on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality

机译：Growth evolution of sixNy on the GaN underlayer and its effects on GaN-on-si (111) heteroepitaxial quality

页面导航

著录项
相似文献
相关主题

著录项

作者
Wang Tzu Yu; Ou Sin Liang; Horng Ray Hua; Wuu Dong Sing;
展开▼
作者单位

展开▼
年度 2015
总页数
原文格式 PDF
正文语种 en_US
中图分类

相似文献

外文文献
中文文献
专利

1. Growth Front Evolution of GaN Thin Films on Sapphire Substrate During HVPE [J] . LU Dian-qing, LI Xin-hua, LIU Xue-dong 半导体光子学与技术（英文版） . 2005,第004期
2. Growth evolution of SixNy on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality [J] . Wang Tzu Yu, Ou Sin Liang, Horng Ray Hua, CrystEngComm . 2014,第25期

机译：SixNy在GaN底层上的生长演变及其对GaN-on-Si（111）异质外延质量的影响
3. The effect of SixNy interlayer on the quality of GaN epitaxial layers grown on Si(111) substrates by MOCVD [J] . Arslan E, Ozturk MK, Ozcelik S, Current applied physics: the official journal of the Korean Physical Society . 2009,第2期

机译：SixNy中间层对通过MOCVD在Si（111）衬底上生长的GaN外延层质量的影响
4. Influence of substrate nitridation before growth on initial growth process of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-MBE [J] . T.Yodo, H.Ando, H.Tsuchiya Journal of Crystal Growth . 2001,第期

机译：生长前衬底氮化对ECR-MBE在Si（001）和Si（111）衬底上生长的GaN异质外延层初始生长过程的影响
5. Heteroepitaxial Growth and Power Devices Using AlGaN/GaN HEMT on 200 mm Si (111) Substrate [C] . Egawa Takashi IEEE Compound Semiconductor Integrated Circuit Symposium . 2013

机译：在200 mm Si（111）衬底上使用AlGaN / GaN HEMT进行异质外延生长和功率器件
6. Heteroepitaxial Thick GaN Layers and Vertical High-Power Devices by Selective Area MOCVD Growth [D] . Tanaka, Atsunori. 2019

机译：通过选择性地区MOCVD生长的异膜厚GaN层和垂直大功率器件
7. Heteroepitaxial Growth of Ferromagnetic MnSb(0001)Films on Ge/Si(111) VirtualSubstrates [O] . ChristopherW. Burrows, Andrew Dobbie, Maksym Myronov, -1

机译：铁磁MnSb（0001）的异质外延生长Ge / Si（111）虚拟电影基材
8. Theoretical study of the heteroepitaxial growth of Pd on Cu(111), Pd on Ni(111), Ni on Pd(111), and Cu on Pd(111) using a semiempirical method [O] . F. R. Negreiros, E. A. Soares, A. de Siervo, 2010

机译：用半经验方法研究pd在Cu（111）上的pd，Ni（111）上的pd，pd（111）上的Ni和pd（111）上的Cu的异质外延生长
9. Improved heteroepitaxial MBE GaN growth with a Ga metal buffer layer [R] . Kim, Y., Subramanya, S. G., Krueger, J., 2000

机译：利用Ga金属缓冲层改善异质外延mBE GaN生长

Growth evolution of SixNy on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality

著录项

相似文献

相关主题

期刊订阅