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The Influence of Backbone Fluorination on the Dielectric Constant of Conjugated Polythiophenes

机译:骨架氟化对共轭聚噻吩介电常数的影响

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摘要

The ability to modify or enhance the dielectric constant of semiconducting polymers can prove valuable for a range of optoelectronic and microelectronic applications. In the case of organic photovoltaics, increasing the dielectric constant of the active layer has often been suggested as a method to control charge generation, recombination dynamics, and ultimately, the power conversion efficiencies. In this contribution, the impact that the degree and pattern of fluorination has on the dielectric constant of poly(3-octylthiophene) (P3OT), a more soluble analogue of the widely studied conjugated material poly(3-hexylthiophene), is explored. P3OT and its backbone-fluorinated analogue, F-P3OT, are compared along with a block and alternating copolymer version of these materials. It is found that the dielectric constant of the polymer thin films increases as the degree of backbone fluorination increases, in a trend consistent with density functional theory calculations of the dipole moment.
机译:改变或增强半导体聚合物的介电常数的能力可证明对一系列光电子和微电子应用有价值。在有机光伏电池的情况下,通常已经提出增加有源层的介电常数作为控制电荷产生,复合动力学以及最终控制功率转换效率的方法。在这一贡献中,探索了氟化程度和模式对聚(3-辛基噻吩)(P3OT)的介电常数的影响。聚(3-辛基噻吩)是广泛研究的共轭材料聚(3-己基噻吩)的更易溶的类似物。将P3OT及其主链氟化类似物F-P3OT与这些材料的嵌段共聚物和交替共聚物进行了比较。发现聚合物薄膜的介电常数随着主链氟化度的增加而增加,其趋势与偶极矩的密度泛函理论计算一致。

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