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Oxygen ion transport and dopant segregation in strained oxide thin films

机译:应变氧化物薄膜中的氧离子迁移和掺杂偏析

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摘要

Modified ionic transport at interfaces in oxide conductors has received significant interest recently, yet previous studies have provided inconsistent and often controversial results. Lattice strain occurring at heterogeneous interfaces or surrounding dislocations is often speculated as the cause for enhanced transport properties, yet direct evidence for this is lacking. The aim of this work was to investigate the possibility for modified oxygen conductivity at interfaces and develop a greater understanding of the underlying mechanisms. ududIn this work, it was shown that the crystallographic orientation of yttria-stabilised zirconia (YSZ) films fabricated by pulsed laser deposition (PLD), could be altered by the roughness and the temperature of the substrate during deposition. Furthermore, the films were seen to feature an expanded out-of-plane lattice parameter, which was found to be dependent upon the deposition temperature, substrate, the orientation of film, and the thermal history after growth. ududThe ionic transport of YSZ films fabricated on a range of substrates was assessed as a function of film thickness using electrochemical impedance spectroscopy (EIS) and a novel method of oxygen isotope exchange tracer diffusion (IETD). No enhancement over the conductivity of bulk YSZ was observed, despite expanded out-of-plane lattice parameters, substrates representing both positive and negative lattice mismatch, and a high density of interfacial dislocations. Instead, all interface regions were found to be more resistive due to a higher density of grain boundaries. ududFinally, gadolinia-doped ceria (CGO) films were analysed by low energy ion scattering (LEIS), to investigate the effects of dopant segregation to the surface and sub-surface regions. Gd segregation was found to occur for all films and observed to increase for higher annealing temperatures. Investigations into the affect of the lattice parameter on the rate of dopant segregation showed a possible link between segregation and lattice strain.
机译:氧化物导体界面处的离子迁移修饰已引起广泛关注,但先前的研究提供了不一致且经常引起争议的结果。通常认为发生在异质界面或周围位错上的晶格应变是提高传输性能的原因,但缺乏直接的证据。这项工作的目的是研究在界面处改变氧电导率的可能性,并加深对潜在机理的了解。 ud ud在这项工作中,表明通过脉冲激光沉积(PLD)制备的氧化钇稳定的氧化锆(YSZ)膜的晶体学取向可能会因沉积过程中基材的粗糙度和温度而改变。此外,可以看出膜具有扩展的面外晶格参数,该参数取决于沉积温度,衬底,膜的取向以及生长后的热历史。使用电化学阻抗谱(EIS)和氧同位素交换示踪剂扩散的新方法(IETD),可以评估在一定范围的基材上制造的YSZ薄膜的离子迁移与膜厚度的关系。尽管扩大了平面外晶格参数,代表正负晶格失配的衬底以及高位错位,但未观察到整体YSZ电导率的增强。取而代之的是,由于较高的晶界密度,发现所有界面区域的电阻都更大。最后,通过低能离子散射(LEIS)分析了氧化ado掺杂的二氧化铈(CGO)膜,以研究掺杂剂偏析到表面和亚表面区域的影响。发现所有膜均发生Gd偏析,观察到较高的退火温度会使其升高。研究晶格参数对掺杂剂偏析速率的影响表明,偏析和晶格应变之间可能存在联系。

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    Harrington George;

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