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Performance of Focused Ion Beam Trimmed Yoke-Type Magnetoresistive Heads for Magnetic Microscopy

机译:聚焦离子束微调轭型磁阻磁头的性能

摘要

Thin-film yoke-type magnetoresistive (MR) tape heads with eight channels have been used for scanning mag-netoresistance microscopy. The NiFe read flux guides of the channels have been trimmed down from 12 um to widths varying between 5 um and 100 nm by focused ion-beam milling with Ga+ions. The tape-bearing surface of the milled regions has been reconstructed in situ by the local deposition of Pt. Tracks with a minimum bit length of 1 um have been written on CoNiO metal evaporated tape and Cogamma Fe2O3 particulate tape with trimmed and untrimmed write channels and have been successfully imaged with all the trimmed read channels. A linear decrease in readback voltage across the MR sensor is observed for channels possessing flux guides trimmed down to 2 um, in agreement with finite-element modeling of the trimmed heads. The severe attenuation in readback voltage observed for flux guides trimmed below 2 um is attributed to a combination of micromagnetic effects. Additionally, damage to the NiFe from Ga+ion implantation may make a minor contribution to the loss in sensor performance. A 65% drop in readback voltage is observed for a channel possessing a flux guide that was trimmed by 98.3% to 200 nm.
机译:具有八个通道的薄膜轭型磁阻(MR)磁头已用于扫描磁阻显微镜。通过使用Ga +离子进行聚焦离子束铣削,已将通道的NiFe读取通量导管从12 um减小到5 um至100 nm之间的宽度。铣削区域的带式表面已通过Pt的局部沉积原位重建。最小位长为1 um的磁道已写入带有修剪和未修剪写通道的CoNiO金属蒸发带和Cogamma Fe2O3微粒带上,并且已成功使用所有修剪的读取通道进行了成像。与修整后的磁头的有限元建模相一致,对于具有修整至2 um的磁通量的通道,在MR传感器上观察到了回读电压的线性下降。修整到2 um以下的磁通量导板观察到的回读电压的严重衰减归因于微磁效应的组合。另外,Ga +离子注入对NiFe的损坏可能对传感器性能的损失影响很小。对于具有通量向导的通道,该通道的回读电压下降了65%,该通量向导已微调了98.3%至200 nm。

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