Non-toxic copper containing chalcogenides are considered as promising alternate materials for the absorber layer in thin film solar cells and visible-light harvesting devices. In this paper, we reported synthesis of Cu3BiS3 thin films using a two-step thermal evaporation method for the first time. A Cu2S layer of 0.4 μm thickness was firstly evaporated onto glass substrate at room temperature, followed by evaporation of a Bi2S3 layer of 0.8 μm thickness. The Cu3BiS3 thin films were formed by thermally annealing and diffusing the two evaporated layers in a vacuum furnace. This method resulted in the improved crystallinity and phase purity of the grown Cu3BiS3 films. Effects of annealing temperature on different properties of the fabricated samples were investigated. The obtained low band-gap (1.45 eV) and good optical properties such as low transmittance (10–30%) and reflectance (~ 10%) of the Cu3BiS3 films demonstrated it as a suitable material for the absorber layer of solar cells.
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机译：无毒的含铜硫族化物被认为是薄膜太阳能电池和可见光收集设备中吸收层的有前途的替代材料。在本文中，我们首次报道了采用两步热蒸发法合成Cu3BiS3薄膜的方法。首先在室温下将0.4μm厚度的Cu2S层蒸发到玻璃基板上，然后蒸发0.8μm厚度的Bi2S3层。通过在真空炉中对两个蒸发层进行热退火和扩散来形成Cu3BiS3薄膜。该方法导致生长的Cu 3 BiS 3膜的结晶度和相纯度提高。研究了退火温度对所制备样品不同性能的影响。所获得的低带隙（1.45 eV）和良好的光学性能，例如Cu3BiS3薄膜的低透射率（10–30％）和反射率（〜10％），证明它是太阳能电池吸收层的合适材料。
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