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Integrated all-photonic non-volatile multi-level memory

机译:集成的全光子非易失性多级存储器

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摘要

Implementing on-chip non-volatile photonic memories has been a long-term, yet elusive goal. Photonic data storage would dramatically improve performance in existing computing architectures1 by reducing the latencies associated with electrical memories2 and potentially eliminating optoelectronic conversions3. Furthermore, multi-level photonic memories with random access would allow for leveraging even greater computational capability4, 5, 6. However, photonic memories3, 7, 8, 9, 10 have thus far been volatile. Here, we demonstrate a robust, non-volatile, all-photonic memory based on phase-change materials. By using optical near-field effects, we realize bit storage of up to eight levels in a single device that readily switches between intermediate states. Our on-chip memory cells feature single-shot readout and switching energies as low as 13.4 pJ at speeds approaching 1 GHz. We show that individual memory elements can be addressed using a wavelength multiplexing scheme. Our multi-level, multi-bit devices provide a pathway towards eliminating the von Neumann bottleneck and portend a new paradigm in all-photonic memory and non-conventional computing.
机译:实现片上非易失性光子存储器是一个长期但难以实现的目标。光子数据存储将通过减少与电存储器2相关的延迟并潜在地消除光电转换3来显着提高现有计算体系结构1的性能。此外,具有随机访问的多级光子存储器将允许利用更大的计算能力4、5、6。然而,光子存储器3、7、8、9、10迄今为止是易失的。在这里,我们展示了一种基于相变材料的坚固,非易失性全光子存储器。通过使用光学近场效应,我们可以在单个设备中实现多达八级的位存储,并且可以在中间状态之间轻松切换。我们的片上存储单元具有单次读取和低至13.4 pJ的开关能量,速度接近1 GHz。我们展示了可以使用波长复用方案解决单个存储元件。我们的多级,多位设备提供了一条消除冯·诺依曼瓶颈的途径,并预示了全光子存储器和非常规计算的新范例。

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