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Synthesis and Characterization of Vanadium Doped Zinc Oxide Thick Film for Chemical Sensor Applicationudud

机译:用于化学传感器的钒掺杂氧化锌厚膜的合成与表征 UD

摘要

Zinc oxide and vanadium pentoxide nanoparticles derived by chemical coprecipitation route were used to cast Zn0.96V0.04O thick film by screen printing method. The structural, morphological, optical, and electrical properties of the film were characterized by powder XRD, SEM, Raman, UV-VIS, and DC conductivity techniques. XRD pattern, SEM image, and Raman spectrum of the film confirm the single phase formation of Wurtzite structure with preferential orientation along [] plane, minor variation in lattice parameters, and vanadium ions substitution at zinc sites. Zn0.96V0.04O pellet has been used for sensing ammonia vapor concentrations in 20–50°C temperature range which exhibits maximum responsiveness and sensitivity at 30°C. The minor variations in resistance are observed with ammonia vapor concentration. The adsorption of ammonia vapors through weak hydrogen bonding and its insertion into lattice by nitrogen lone pairs donation at vacant/defect sites in lattice caused by vanadium doping are considered to explain gas sensing mechanism.
机译:采用化学共沉淀法得到的氧化锌和五氧化二钒纳米颗粒通过丝网印刷法流延Zn0.96V0.04O厚膜。用粉末XRD,SEM,拉曼,UV-VIS和DC电导率技术表征了薄膜的结构,形态,光学和电学性质。薄膜的XRD图谱,SEM图像和拉曼光谱证实了纤锌矿结构的单相形成,其沿[]平面优先取向,晶格参数变化较小,并且锌位处的钒离子取代。 Zn0.96V0.04O颗粒已用于感测20–50°C温度范围内的氨气浓度,该温度范围在30°C下显示出最大的响应度和灵敏度。在氨蒸汽浓度下观察到电阻的微小变化。认为通过弱氢键吸附氨蒸气并通过钒掺杂引起的晶格空位/缺陷位上的氮孤对捐赠而将其插入晶格中,可以解释气体传感机理。

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