Effect of CdSe quantum dots on hole transport in poly(3-hexylthiophene) thin films

摘要

This letter demonstrates the effect of cadmium selenide (CdSe) quantum dots on hole transport in poly(3-hexylthiophene) (P3HT) thin films. Current-voltage characteristics of P3HT and P3HT:CdSe thin films have been studied in the temperature range of 288–85 K, in hole only device configurations, i.e., indium tin oxide (ITO)/poly(ethylene-dioxthiophene):polystyrenesulphonate (PEDOT:PSS)/P3HT/Au and ITO/PEDOT:PSS/P3HT:CdSe/Au. The incorporation of CdSe quantum dots in P3HT results in the enhancement in hole current and switches the transport from dual conduction mechanism, viz., trap and mobility models to only trap model. This is attributed to the reduction in characteristic trap energy from 60 to 32 meV and trap density from 2.5×1018 to 1.7×1018 cm−3.