首页> 外文OA文献 >Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide filmsud

【2h】

Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide filmsud

机译：低热预算退火对aLD基氧化铝薄膜表面钝化的影响 ud

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

AI期刊论文写作 >>

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
- Vandana; Batra Neha; Gope Jhuma; Singh Rajbir; Panigrahi Jagannath; Tyagi Sanjay; Pathi P.; Srivastava S. K.; Rauthan C. M. S.; Singh P. K.;
展开▼
作者单位

展开▼
年度 2014
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films [J] . Vandana, Neha Batra, Jhuma Gope Physical chemistry chemical physics: PCCP . 2014,第39期

机译：低热预算退火对基于ALD基氧化铝膜表面钝化的影响
2. Smoothing, passivation and re-passivation f silicon surfaces by anodic oxidation: a low thermal budget process [J] . J. Rappich Microelectronics & Reliability . 2000,第4a5期

机译：通过阳极氧化对硅表面进行平滑，钝化和再钝化：低热预算工艺
3. Effects of Low Temperature Anneal on the Interface Properties of Thermal Silicon Oxide for Silicon Surface Passivation [J] . Balaji Nagarajan, Park Cheolmin, Chung Sungyoun, Journal of nanoscience and nanotechnology . 2016,第5期

机译：低温退火对热氧化硅表面钝化的界面性能的影响
4. Comparison between aluminum oxide surface passivation films deposited with thermal ALD, plasma ALD and PECVD [C] . Dingemans G., Engelhart P., Seguin R., 35th IEEE Photovoltaic Specialists Conference . 2010

机译：热ALD，等离子ALD和PECVD沉积的氧化铝表面钝化膜的比较
5. Passive Q-switching of the chromium:aluminum oxide laser, chromium:lithium calcium aluminum oxide laser, and thulium,chromium:yttrium aluminum oxide laser using dysprosium(2+):calcium fluoride, chromium(4+):yttrium silicon oxide, and holmium:yttrium lithium fluoride solid-state saturable absorbers. [D] . Kuo, Yen-Kuang. 1995

机译：使用using（2+）：氟化钙，铬（4+）：钇氧化硅和氧化铬：氧化铝激光器，铬：锂钙氧化铝激光器和th，铬：钇氧化铝激光器的无源Q开关:：钇氟化锂固态可饱和吸收剂。
6. Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions [O] . Kangping Liu, Odile Cristini-Robbe, Omar Ibrahim Elmi, 2019

机译：隧穿原子层沉积氧化铝：硅结的表面钝化的相关结构/电性能研究
7. Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide films [O] . Vandana Vandana, Neha Batra, Jhuma Gope, 2014

机译：低热预算退火对基于ALD基氧化铝膜表面钝化的影响
8. Effective passivation of the low resistivity silicon surface by a rapid thermal oxide/PECVD silicon nitride stack and its application to passivated rear and bifacial Si solar cells [R] . Rohatgi, A. , Narasimha, S. , Ruby, D. S. 1998

机译：通过快速热氧化物/ pECVD氮化硅叠层有效钝化低电阻率硅表面及其在钝化后部和双面si太阳能电池中的应用

Effect of low thermal budget annealing on surface passivation of silicon by ALD based aluminum oxide filmsud

著录项

引文网络

相似文献

相关主题

期刊订阅