Effect of gas flow on the growth of In-rich AlInN films by metal-organic chemical vapor deposition

摘要

Indium-rich AlInN are grown by metal-organic(MO) chemical vapor deposition usingtrimethylaluminum, trimethylindium, and ammonia. Under the conservation of MO influx, theeffects of gas flow in the MO route on AlInN growth and Al-related parasitic reaction areinvestigated. With an increase in this gas flow, the suppression of Al-related parasitic reaction, i.e.,enhancement in Al content incorporation and improvement of crystalline quality, is satisfactorilyshown until the occurring of severe phase separation. Accordingly, Al content x in AlxIn1−xN can betuned from x=0.02 to 0.26. The Raman spectra of those AlInN samples with phase separation areanalyzed by the resonant excitation effect and two-mode behavior for A1(LO). Finally, we proposea phase diagram to interpret the phase separation and Al content evolution under the influence of gas flow.