Conception et Etude de la Fiabilité des Amplificateurs de Puissance Fonctionnant aux Fréquences Millimétriques en Technologies CMOS Avancées

摘要

With the emergence of millimeter-wave applications such as automotive radar or WHDMI, the reliability became a very important issue for the industry. In a radio transceiver, the main reliability problems concern the MOS transistors used in the power amplifiers, due to the high power level. These devices are subject to deterioration by the hot carrier phenomenon. This impacts heavily the power amplifiers performances. This thesis work concerns the design and the study of the reliability of millimeter-wave power amplifiers in advanced CMOS technologies. The manuscript is divided into four chapters. The two first one concern the study, the design, the modeling and the characterization of integrated active and passive elements on silicon and used into power amplifiers at millimeter wave frequencies. The third chapter describes the three power amplifiers designed and realized for reliability tests. The final chapter provides a comprehensive study of the reliability of these circuits to calculate their lifetime.