Démonstration de l’intérêt des dispositifs multi-grilles auto-alignées pour les nœuds sub-10nm

摘要

Changing the bulk transistor structure was sufficient so far to fulfill the scaling needs. The current technologies answer the needs of electrostatics control with the industrialization of fully depleted transistors, with thin-film (FDSOI) or non-planar (TriGate FinFet bulk) technologies. In the latter, bulk substrate is still an issue for low power applications. Combining SOI with multiple-gate structure gives rise to TriGate on SOI (or TGSOI). We will discuss the interest of such devices and will demonstrate their compatibility with strain techniques. We will focus on the mobility and current enhancement obtained on sub-15nm width devices. Simulations also demonstrate the compatibility of TGSOI with VT modulation technique. Finally, we demonstrate the fabrication through 3D lithography of ultimate stacked nanowires with a gate-all-around. The conception, physical characterization and first electrical results are presented.