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High-temperature behavior of supported graphene: Electron-phonon coupling and substrate-induced doping

机译:负载石墨烯的高温行为:电子-声子耦合和衬底诱导的掺杂

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摘要

The temperature-dependent electronic structure and electron-phonon coupling of weakly doped supported graphene is studied by angle-resolved photoemission spectroscopy and ab initio molecular dynamics simulations. The electron-phonon coupling is found to be extremely weak, reaching the lowest value ever reported for any material. However, the temperature-dependent dynamic interaction with the substrate leads to a complex and dramatic change in the carrier density and type in graphene. These changes in the electronic structure are mainly caused by fluctuations in the graphene-substrate distance.
机译:通过角分辨光发射光谱和从头算分子动力学模拟研究了弱掺杂负载石墨烯的温度依赖性电子结构和电子-声子耦合。发现电子-声子耦合极弱,达到任何材料所报道的最低值。然而,与基底的温度相关的动态相互作用导致载流子密度和石墨烯类型发生复杂而剧烈的变化。电子结构的这些变化主要是由石墨烯与基板之间的距离波动引起的。

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