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Design and characterisation of millimetre wave planar Gunn diodes and integrated circuits

机译:毫米波平面耿恩二极管和集成电路的设计与表征

摘要

Heterojunction planar Gunn devices were first demonstrated by Khalid et al in 2007. This new design of Gunn device, or transferred electron device, was based on the well-established material system of GaAs as the oscillation media. The design did not only breakthrough the frequency record of GaAs for conventional Gunn devices, but also has several advantages over conventional Gunn devices, such as the possibility of making multiple oscillators on a single chip and compatibility with monolithic integrated circuits. However, these devices faced the challenge of producing high enough RF power for practical applications and circuit technology for integration. This thesis describes systematic work on the design and characterisations of planar Gunn diodes and the associated millimetre-wave circuits for RF signal power enhancement. Focus has been put on improving the design of planar Gunn diodes and developing high performance integrated millimetre-wave circuits for combining multiple Gunn diodes. Improvement of device design has been proved to be one of the key methods to increase the signal power. By introducing additional δ-doping layers, electron concentration in the channel increases and better Gunn domain formation is achieved, therefore higher RF power and frequency are produced. Combining multiple channels in the vertical direction within devices is another effective way to increase the output signal power as well as DC-to-RF conversion efficiency. In addition, an alternative material system, i.e. In0.23Ga0.77As, has also been studied for this purpose. Planar passive components, such as resonators, couplers, low pass filters (LPFs), and power combiners with high performance over 100 GHz have been developed. These components can be smoothly integrated with planar Gunn diodes for compact planar Gunn oscillators, and therefore contribute to RF power enhancement. In addition, several new measurement techniques for characterising oscillators and passive devices have also been developed during this work and will be included in this thesis.
机译:异质结平面Gunn器件由Khalid等人于2007年首次展示。Gunn器件(或转移电子器件)的这种新设计基于成熟的GaAs材料系统作为振荡介质。该设计不仅突破了传统Gunn器件的GaAs频率记录,而且具有比传统Gunn器件更多的优势,例如可以在单个芯片上制造多个振荡器以及与单片集成电路兼容。但是,这些设备面临着为实际应用和集成电路技术产生足够高的RF功率的挑战。本文描述了有关平面耿氏二极管和相关毫米波电路的设计和表征的系统工作,以提高射频信号功率。重点已放在改善平面耿氏二极管的设计上,并开发出高性能的毫米波电路以结合多个耿氏二极管。事实证明,改进设备设计是提高信号功率的关键方法之一。通过引入额外的δ掺杂层,沟道中的电子浓度增加,并实现了更好的Gunn域形成,因此产生了更高的RF功率和频率。在设备内垂直方向上组合多个通道是增加输出信号功率以及DC-RF转换效率的另一种有效方法。此外,为此目的还研究了替代材料系统,即In0.23Ga0.77As。已开发出在100 GHz以上具有高性能的平面无源元件,例如谐振器,耦合器,低通滤波器(LPF)和功率合成器。这些组件可以与平面耿氏二极管平滑地集成在一起,从而形成紧凑的平面耿氏振荡器,因此有助于提高射频功率。此外,在这项工作期间,还开发了几种用于表征振荡器和无源器件的新测量技术,并将其包含在本文中。

著录项

  • 作者

    Li Chong;

  • 作者单位
  • 年度 2012
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  • 原文格式 PDF
  • 正文语种 English
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