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A structural study of BiFeO3-PbTiO3 thin films deposited by pulsed laser deposition

机译:脉冲激光沉积BiFeO3-pbTiO3薄膜的结构研究

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摘要

In recent years ferroelectric thin films have received an enormous amount of attention due to their potential use in electronic device applications. Bismuth ferrite lead titanate (xBiFeO3 – (1-x)PbTiO3) thin films are of special interest due to their multiferroic nature, exceptionally high tetragonality and high switchable polarization close to the morphotropic phase boundary. This work encompasses an initial structural investigation into xBiFeO3 – (1-x)PbTiO3 thin films deposited onto Pt/TiOx/SiO2/Si substrates by pulsed laser deposition. The effect of substrate orientation, film composition and film thickness are described as well as the growth mechanisms and interactions at the substrate – film interface. The pulsed laser deposition conditions were optimized to produce crystalline stoichiometric films of tetragonal and mixed phase tetragonal –rhombohedral phases. The films structure and growth mechanisms were studied using x-ray diffraction, scanning electron microscopy and atomic force microscopy. It was found that the substrate orientation, film composition and film thickness determine the structural properties of the deposited film. A critical film thickness of 290 nm was identified as the minimum for a piezoelectric response to be observed. The piezoelectric nature of the films was confirmed by piezoforce microscopy. Transmission electron microscopy analysis revealed the occurrence of interdiffusion at the substrate – film interface between the platinum bottom electrode and bismuth from within the deposited film. A strontium ruthanate buffer layer was deposited by pulsed laser deposition which prevented the interdiffusion, however local diffusion with the xBiFeO3 – (1-x)PbTiO3 deposited film was still present.
机译:近年来,铁电薄膜由于其在电子设备应用中的潜在用途而受到了广泛的关注。铋铁氧体钛酸铅(xBiFeO3 –(1-x)PbTiO3)薄膜由于其多铁性,极高的四方性和接近同晶相界的高可转换极化而特别受关注。这项工作包括对xBiFeO3 –(1-x)PbTiO3薄膜的初步结构研究,该薄膜通过脉冲激光沉积法沉积在Pt / TiOx / SiO2 / Si衬底上。描述了基材取向,薄膜组成和薄膜厚度的影响,以及基材–薄膜界面处的生长机理和相互作用。优化了脉冲激光沉积条件,以产生四方和混合相四方-菱形面相的晶体化学计量膜。使用X射线衍射,扫描电子显微镜和原子力显微镜研究了膜的结构和生长机理。发现基材的取向,膜组成和膜厚度决定了沉积膜的结构性质。 290 nm的临界膜厚被确定为要观察的压电响应的最小值。膜的压电性质通过压电显微镜证实。透射电子显微镜分析显示,在沉积膜内部,铂底电极和铋之间的基底-膜界面处发生了相互扩散。通过脉冲激光沉积沉积了钌酸锶缓冲层,防止了相互扩散,但是xBiFeO3 –(1-x)PbTiO3沉积膜的局部扩散仍然存在。

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    Bygrave Faye;

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  • 年度 2011
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