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Stress analysis, dielectric, piezoelectric, and ferroelectric properties of PZT thick films. Fabrication of a 50MHz Tm-pMUT annular array

机译:pZT厚膜的应力分析,介电,压电和铁电性质。制造50mHz Tm-pmUT环形阵列

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摘要

PZT films up to 35 μm thick were fabricated, using a composite sol gel route combining a PZT powder and a PZT sol. The maximum temperature for the process was 710°C. A demonstration of single layer and multilayer structures was given to show the flexibility of this technology. With Stoney’s Equation, studies of the in-situ film stress development as a function of the film thickness and density was effectuated. It helped to understand that the internal forces increase considerably with the film thickness and density. This study yields to set up experimental conditions in which a crack free surface finish of a 28μm thick film revealed the adaptability of the spin coating technique to fabricate thick films. The wet etching technology revealed the possibility of a great adaptability to pattern and shape innovative devices such as bars 10 μm wide of 21μm PZT thick film. The results open the way to a wide range of new industrial application requiring small features and/or multilayer PZT thick film with embedded electrodes. The single element and annular array devices have been shown to resonate at approximately 60MHz in air and 50 MHz in water. Three types of the composite thick film – 2C+4S, 2C+5S and 2C+6S – were used to fabricate the Tm-pMUT devices. In each case the most effective poling was obtained by maintaining the poling field of 8.4V/μm during cooling from the poling temperature (200ºC) to ‘freeze’ poled domains in place. This ‘freezing’ was required to prevent the tensile stresses within the film from reorienting the domains at high temperatures when the poling field is removed. Increasing values of thickness mode coupling coefficient (kt) were observed with increasing levels of sol infiltration (decreasing density). Such behaviour is thought to be due to non linear effects on the piezoelectric coefficient (e33) at high levels of porosity. For very dense thick film material a kt of 0.47 was observed which is comparable to that observed for the bulk material.
机译:使用结合了PZT粉末和PZT溶胶的复合溶胶凝胶路线,制造了厚度高达35μm的PZT膜。该过程的最高温度为710℃。演示了单层和多层结构,以显示该技术的灵活性。利用Stoney方程,完成了就地膜应力发展随膜厚度和密度变化的研究。它有助于理解内力随着膜厚度和密度的增加而大大增加。这项研究得出了建立实验条件的条件,其中28μm厚膜的无裂纹表面光洁度揭示了旋涂技术制造厚膜的适应性。湿法蚀刻技术揭示了对图案和形状创新设备(如宽10μm宽,21μmPZT厚膜的条)具有很大适应性的可能性。结果为需要小特征和/或带有嵌入式电极的多层PZT厚膜的新型工业应用开辟了道路。单个元件和环形阵列设备已显示出在空气中约60MHz的频率和在水中约50MHz的谐振。使用三种类型的复合厚膜-2C + 4S,2C + 5S和2C + 6S来制造Tm-pMUT器件。在每种情况下,通过在从极化温度(200ºC)到适当的“冻结”极化区域的冷却过程中保持8.4V /μm的极化场,可以获得最有效的极化。需要进行这种“冻结”操作,以防止在去除极化场时在高温下薄膜内的拉伸应力使畴重新定向。随着溶胶渗透水平的增加(密度降低),厚度模式耦合系数(kt)的值增加。认为这种行为是由于在高孔隙率下对压电系数(e33)的非线性影响。对于非常致密的厚膜材料,观察到的kt为0.47,与散装材料的kt相当。

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