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Synchrotron-radiation-induced deposition of boron and boron carbide films from boranes and carboranes: Decaborane

机译:同步辐射诱导的硼烷和碳硼烷硼和碳化硼薄膜的沉积:十硼烷

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摘要

Boron has been deposited successfully on Si(111) from the synchrotron-radiation-induced decomposition of decaborane (14), i.e., B10H14. The rate of deposition is limited by the adsorption rate of decaborane (14) on the surface. In addition there is some indication that there is an activation barrier to dissociative adsorption. The synchrotron-radiation- induced growth rate of boron thin films from decaborane (14) is linear with coverage for a large range of thickness, suggesting a constant sticking coefficient for decaborane adsorption at room temperature.
机译:硼已通过同步辐射辐射诱导的十硼烷(14),即B10H14分解成功沉积在Si(111)上。沉积速率受到十硼烷(14)在表面的吸附速率的限制。另外,有迹象表明存在离解吸附的活化障碍。十硼烷(14)的硼薄膜的同步加速辐射诱导的生长速率与大范围的厚度覆盖率呈线性关系,这表明室温下十硼烷吸附的粘附系数恒定。

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