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Porous GaN and High-κ MgO–GaN MOS Diode Layers Grown in a Single Step on Silicon

机译：多孔GaN和高κmgO-GaN mOs二极管层在硅上单步生长

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10.1021/cm4037023

机译：10.1021 /厘米4037023

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Bilousov O.V.; Carvajal J.J.; Vilalta-Clemente A.; Ruterana P.; Díaz F.; Aguiló M.; ODwyer C.;
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1. Porous GaN and High-xr MgO-GaN MOS Diode Layers Grown in a Single Step on Silicon [J] . O. V. Bilousov, J. J. Carvajal, A. Vilalta-Clemente Chemistry of Materials: A Publication of the American Chemistry Society . 2014,第2期

机译：在硅上一步生长的多孔GaN和High-xr MgO-GaN MOS二极管层
2. Step-edge segregation model for step-velocity dependences of carbon and oxygen concentrations in GaN layers grown on m-plane GaN [J] . Mochizuki Kazuhiro, Horikiri Fumimasa, Ohta Hiroshi, Japanese journal of applied physics . 2021,第1期

机译：在M平面GaN上生长的GaN层中碳和氧浓度的阶梯速度依赖性的步进分离模型
3. Interface modification of two-step grown InGaN/GaN superlattices preparing layers for InGaN-based green LED on silicon substrate [J] . Jiang Xingan, Zheng Changda, Mo Chunlan, Superlattices and microstructures . 2019,第FEBa期

机译：两步生长的InGaN / GaN超晶格的界面改性为硅衬底上的基于InGaN的绿色LED制备层
4. Metal catalyzed porous n-type GaN layers: low resistivity ohmic contacting and single-step MgO/GaN diode formation [C] . O. V. Bilousov, J. J. Carvajal, D. Drouin, Symposium on wide bandgap semiconductor materials and devices;Meeting of the Electrochemical Society . 2013

机译：金属催化的多孔n型GaN层：低电阻欧姆接触和单步MgO / GaN二极管形成
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness [O] . Cheng Chen, Jingwen Chen, Jun Zhang, 2016

机译：通过优化MgO层间厚度从ZnO量子点基/ GaN异质结二极管中装饰银的局部表面等离子体增强紫外电致发光
7. Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates [O] . Ray-Hua Horng, Bing-Rui Wu, Ching-Ho Tien, 2014

机译：使用在硅基板上生长的GaN脱膜制造的GaN的发光二极管的性能
8. MOCVD Growth and Etching of N-Type GaN Layers on HPVE-Grown Templates and Free-Standing GaN Substrates [R] . Weyher, J. L. 2005

机译：在HpVE生长的模板和自支撑GaN衬底上的N型GaN层的mOCVD生长和蚀刻

Porous GaN and High-κ MgO–GaN MOS Diode Layers Grown in a Single Step on Silicon

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